Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

Details Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

2003-01-20

arxiv.org/abs/cond-mat/0301361v1

Phys. Rev. Lett. 91, 126404 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevLett.91.126404

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.

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