Two-dimensional electrons occupying multiple valleys in AlAs

Details Two-dimensional electrons occupying multiple valleys in AlAs Two-dimensional electrons occupying multiple valleys in AlAs

2006-06-06

arxiv.org/abs/cond-mat/0606158v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

short review article, submitted for publication

Scientific paper

Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.

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