Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation

Details Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation

2002-04-17

arxiv.org/abs/cond-mat/0204370v1

J. Phys. D: Appl. Phys. 35 (2002) L48

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

10.1088/0022-3727/35/11/104

We report on the synthesis of high quality La$_{1/3}$Sr$_{2/3}$FeO$_3$ (LSFO) thin films using the pulsed laser deposition technique on both SrTiO$_3$ (STO) and LaAlO$_3$ (LAO) substrates (100)-oriented. From X-Ray diffraction (XRD) studies, we find that the films have an out-of-plane lattice parameter around 0.3865nm, almost independent of the substrate (i.e. the nature of the strains). The transport properties reveal that, while LSFO films deposited on STO exhibit an anomaly in the resistivity vs temperature at 180K (corresponding to the charge-ordered transition and associated with a transition from a paramagnetic to an antiferromagnetic state), the films grown on LAO display a very small magnetoresistance behavior and present an hysteresis around 270K under the application of a 4T magnetic field. The changes in transport properties between both substrates are discussed and compared with the corresponding single crystals.

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