Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime

Details Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime

2002-04-16

arxiv.org/abs/cond-mat/0204354v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 5 figures

Scientific paper

10.1103/PhysRevB.66.014402

We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on the metallic island. The resulting spin-splitting of the electrochemical potentials of the island, because of an additional shift by the charging energy, can be detected from the spacing between two resonances in the current-voltage characteristics. The results were obtained in the framework of a real-time diagrammatic approach which allows to study higher order (co-)tunneling processes in the strong nonequlibrium situation.

Affiliated with

Also associated with

No associations

Rating

Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-304205