Piezo-Magneto-Electric Effects in p-Doped Semiconductors

Details Piezo-Magneto-Electric Effects in p-Doped Semiconductors Piezo-Magneto-Electric Effects in p-Doped Semiconductors

2004-08-22

arxiv.org/abs/cond-mat/0408476v1

Phys. Rev. B 72, 033203 (2005)

Physics

Condensed Matter

Other Condensed Matter

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.72.033203

We predict the appearance of a uniform magnetization in strained three dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

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