Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

Details Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

2010-06-08

arxiv.org/abs/1006.1564v1

Physics

Condensed Matter

Strongly Correlated Electrons

13 pages, 4 figures

Scientific paper

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.

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