Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

Details Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

2004-09-12

arxiv.org/abs/cond-mat/0409296v1

Physics

Condensed Matter

Other Condensed Matter

4 figures; To appear in Appl. Phys. Lett

Scientific paper

10.1063/1.1799245

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.

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