Towards quantum well hot hole lasers

Details Towards quantum well hot hole lasers Towards quantum well hot hole lasers

2002-01-22

arxiv.org/abs/cond-mat/0201396v1

Proc. 25th Internat. Conf. on the Physics of Semiconductors Parts I/II, ICPS-25 Osaka 2000, ed. by N. Miura, T. Ando, Springer

Physics

Condensed Matter

3 pages, three figure parts. Electronic version of conference paper

Scientific paper

It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band structure by changing the crystal orientation of the growth direction; to use the well width to shift the subband offsets, enabling the effect of the LO phonon scattering cut-off to be controlled; and to use modulation doping to ensure a high hole concentration to increase the gain without the dopants being present in the gain region. We present the first simulations of THz quantum well hot-hole lasers that can produce inversion and optical gain.

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