Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

Details Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

2006-11-06

arxiv.org/abs/cond-mat/0611158v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.2430935

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.

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