Quantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser

Details Quantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser Quantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser

1996-05-02

arxiv.org/abs/cond-mat/9605013v1

IEEE J. Quantum Electron. 33, 1170 (1997)

Physics

Condensed Matter

8 pages, REVTEX 3.0, 3 compressed postscript figures

Scientific paper

10.1109/3.594880

We propose a quantum-dot version of the quantum-well cascade laser of Faist et al. [Science {\bf 264}, 553 (1994)]. The elimination of single phonon decays by the three-dimensional confinement implies a several order-of-magnitude reduction in the threshold current. The requirements on dot size (10-20nm) and on dot density and uniformity [one coupled pair of dots per (180nm)^3 with 5% nonuniformity] are close to current technology.

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