Negative Magnetoresistance Produced by Hall Fluctuations in a Ferromagnetic Domain Structure

Details Negative Magnetoresistance Produced by Hall Fluctuations in a Ferromagnetic Domain Structure Negative Magnetoresistance Produced by Hall Fluctuations in a Ferromagnetic Domain Structure

2001-01-17

arxiv.org/abs/cond-mat/0101268v2

Appl. Phys. Lett. 79, 979 (2001).

Physics

Condensed Matter

Materials Science

3 pages, submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.1392978

We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR is due to a classical current-distortion effect arising from spatial variations in the Hall conductivity, combined with a change in domain structure due to an applied magnetic field. The negative MR can exceed 1000% if the product of the carrier relaxation time and the internal magnetic field due to spontaneous magnetization is sufficiently large.

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