Tunnel Magnetoresistance of a Single-Molecule Junction

Details Tunnel Magnetoresistance of a Single-Molecule Junction Tunnel Magnetoresistance of a Single-Molecule Junction

2008-12-26

arxiv.org/abs/0812.4698v1

J. Appl. Phys. 104, 123715 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1063/1.3050347

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the number of contact points between the device electrodes and the molecule. The TMR values more than 60% are obtained by adjusting the related parameters.

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