On the Origin of the Metal-Insulator Transition in 2D

Details On the Origin of the Metal-Insulator Transition in 2D On the Origin of the Metal-Insulator Transition in 2D

1997-07-04

arxiv.org/abs/cond-mat/9707053v1

Intern. Conf. on Localization and Quantum Transport in Solids, Jaszowiec, Poland (1996). T.Dietl ed., Inst. of Physics PAN, Wa

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages (postscript) including 1 table and 1 fig

Scientific paper

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data.

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