Electric field dependence of Raman-active modes in single-wall carbon nanotube thin films

Details Electric field dependence of Raman-active modes in single-wall carbon nanotube thin films Electric field dependence of Raman-active modes in single-wall carbon nanotube thin films

2006-11-02

arxiv.org/abs/cond-mat/0611040v1

Physics

Condensed Matter

Materials Science

17 pages, 4 figures

Scientific paper

We report on electrical Raman measurements in transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external electric field results in downshifts of the D and G modes and in reduction of their intensity. The intensities of the radial breathing modes increase with electric field in metallic SWNTs, while decreasing in semiconducting SWNTs. A model explaining the phenomenon in terms of both direct and indirect (Joule heating) effects of the field is proposed. Our work rules out the elimination of large amounts of metallic SWNTs in thin film transistors using high field pulses. Our results support the existence of Kohn anomalies in the Raman-active optical branches of metallic graphitic materials [Phys. Rev. Lett. 93 (2004) 185503].

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