Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography

Details Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography

2004-04-03

arxiv.org/abs/cond-mat/0404068v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 3 figures

Scientific paper

10.1063/1.1829797

We utilize a focused beam of Ga+ ions to define magnetization pinning sites in a ferromagnetic epilayer of (Ga,Mn)As. The nonmagnetic defects locally increase the magneto-crystalline anisotropy energies, by which a domain wall is pinned at a given position. We demonstrate techniques for manipulating domain walls at these pinning sites as probed with the giant planar Hall effect (GPHE). By varying the magnetic field angle relative to the crystal axes, an upper limit is placed on the local effective anisotropy energy.

Affiliated with

Also associated with

No associations

Rating

Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pinning a Domain Wall in (Ga,Mn)As with Focused Ion Beam Lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-287177