Hole states in wide band-gap diluted magnetic semiconductors and oxides

Details Hole states in wide band-gap diluted magnetic semiconductors and oxides Hole states in wide band-gap diluted magnetic semiconductors and oxides

2007-03-11

arxiv.org/abs/cond-mat/0703278v1

Phys. Rev. B 77 (2008) 085208.

Physics

Condensed Matter

Other Condensed Matter

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.77.085208

Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The obtained results show that the strong coupling between valence-band holes and localized spins gives rise to a mid-gap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band-gap with the magnetic ion concentration.

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