Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2006-09-16
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Preprint version of a paper submitted to TED, Transaction on Electron Devices. this is the final reviewed version. This work s
Scientific paper
10.1109/TED.2006.887202
In this paper we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage characteristics it is possible to extract a series of material parameters of alternative gate dielectrics. We have focused on HfO2 and HfSiXOYNZ gate stacks and have extracted information on the nature of localized states in the dielectric responsible for a trap-assisted tunneling current component and for the temperature behavior of the I-V characteristics. Simulations are based on a 1D Poisson-Schrdinger solver capable to provide the pure tunneling current and Trap Assisted Tunneling component. Energy and capture cross section of traps responsible for TAT current have been extracted.
Campera Andrea
Crupi Felice
Iannaccone Giuseppe
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