Self-organized superlattice formation in II-VI and III-V semiconductors

Details Self-organized superlattice formation in II-VI and III-V semiconductors Self-organized superlattice formation in II-VI and III-V semiconductors

1997-03-27

arxiv.org/abs/cond-mat/9703242v1

Physics

Condensed Matter

Statistical Mechanics

RevTeX, 9 pages, 1 ps figure, to appear in Applied Physics Letters

Scientific paper

There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.

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