Thermoelectric properties of junctions between metal and models of strongly correlated semiconductors

Details Thermoelectric properties of junctions between metal and models of strongly correlated semiconductors Thermoelectric properties of junctions between metal and models of strongly correlated semiconductors

2003-09-29

arxiv.org/abs/cond-mat/0309687v1

Properties and Applications of Thermoelectric Materials, edited by V. Zlatic and A. C. Hewson, NATO Series B (Springer Science

Physics

Condensed Matter

Strongly Correlated Electrons

18 pages, 8 postscript b/w figures, Revtex 4.0

Scientific paper

We study the thermopower of a junction between a metal and a strongly correlated semiconductor. Both in the electronic ferroelectric regime and in the Kondo insulator regime the thermoelectric figures of merit, ZT, of these junctions are compared with that of the ordinary semiconductor. By inserting at the interface one or two monolayers of atoms different from the bulk, with a suitable choice of rare-earth elements very high values of ZT can be reached at low temperatures. The potential of the junction as a thermoelectric device is discussed.

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