GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs

Details GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs

2009-09-18

arxiv.org/abs/0909.3406v3

Phys. Rev. B 81, 121202(R) (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.81.121202

We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as previously suggested, but from surface electron depletion.

Affiliated with

Also associated with

No associations

Rating

GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-276517