Growth of Strongly Biaxially Aligned MgB2 Thin Films on Sapphire by Post-annealing of Amorphous Precursors

Details Growth of Strongly Biaxially Aligned MgB2 Thin Films on Sapphire by Post-annealing of Amorphous Precursors Growth of Strongly Biaxially Aligned MgB2 Thin Films on Sapphire by Post-annealing of Amorphous Precursors

2001-06-14

arxiv.org/abs/cond-mat/0106278v1

Physics

Condensed Matter

Superconductivity

12 Pages, 5 figures, submitted to Applied Physics Letters

Scientific paper

10.1063/1.1424070

MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. The films had grain sizes of 0.1-1 micron and a strong biaxial alignment was observed in the 950C annealed film.

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