Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

Details Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite Transport study of Berry's phase, the resistivity rule, and quantum Hall effect in graphite

2010-10-04

arxiv.org/abs/1010.0603v1

Phys. Rev. B 82, 165327 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.82.165327

Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - \Delta R_{xx}$. This feature is consistent with the observed relative phases of the oscillatory $R_{xx}$ and $R_{xy}$.

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