Enhancement of Kondo effect in multilevel quantum dots

Details Enhancement of Kondo effect in multilevel quantum dots Enhancement of Kondo effect in multilevel quantum dots

2004-08-07

arxiv.org/abs/cond-mat/0408159v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 6 figures

Scientific paper

10.1143/JPSJ.74.95

We theoretically study enhancement mechanisms of the Kondo effect in multilevel quantum dots. In quantum dots fabricated on semiconductors, the energy difference between discrete levels \Delta is tunable by applying a magnetic field. With two orbitals and spin 1/2 in the quantum dots, we evaluate the Kondo temperature T_K as a function of \Delta, using the scaling method. T_K is maximal around \Delta=0 and decreases with increasing |\Delta|, following a power law, T_K(\Delta)=T_K(0) (T_K(0)/|\Delta|)^\gamma, which is understood as a crossover from SU(4) to SU(2) Kondo effect. The exponents on both sides of a level crossing, \gamma_L and \gamma_R, satisfy a relation of \gamma_L \gamma_R=1. We compare this enhanced Kondo effect with that by spin-singlet-triplet degeneracy for an even number of electrons, to explain recent experimental results using vertical quantum dots.

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