Model of crystal growth with simulated self-attraction

Details Model of crystal growth with simulated self-attraction Model of crystal growth with simulated self-attraction

2008-11-26

arxiv.org/abs/0811.4302v1

Physics

Condensed Matter

Statistical Mechanics

7 pages, 9 figures

Scientific paper

The (1+1)-dimensional kinetic model of crystal growth with simulated self-attraction and random sequential or parallel dynamics is introduced and studied via Monte-Carlo simulations. To imitate the attraction of absorbing atoms the probability of deposition is chosen to depend on the number of the nearest-neighbor atoms surrounding the deposited atom so it increases with this number. As well the evaporation probabilities are chosed to roughly account for this self-attraction. The model exhibits the interface depinning transition with KPZ-type roughness behavior in the moving phase. The critical indices of the correlation lengths are $\nu_\parallel = 0.82 \pm 0.03,{\rm{}}\nu_ \bot = 0.55 \pm 0.02$ and the critical index of the growth velocity is $1.08 \pm 0.03$ indicating the new universality class of the depinning transition. The critical properties of the model do not depend on the type of dynamics implemented.

Affiliated with

Also associated with

No associations

Rating

Model of crystal growth with simulated self-attraction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Model of crystal growth with simulated self-attraction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Model of crystal growth with simulated self-attraction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-274503