Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions

Details Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions Inverse Tunneling Magnetoresistance in nanoscale Magnetic Tunnel Junctions

2005-05-16

arxiv.org/abs/cond-mat/0505376v1

Phys. Rev. B 72, 024401 (2005).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 4 figures, To be published in Phys. Rev. B (in press)

Scientific paper

10.1103/PhysRevB.72.024401

We report on our theoretical study of the inverse TMR effect in the spin
polarized transport through a narrow channel. In the weak tunneling limit, we
find the ordinary positive TMR. The TMR changes its sign as the transmission
probability becomes large close to a unity. Our results might be relevant to
the magnetic tunnel junction with a pinhole or a quantum point contact.

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