Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

Details Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

2007-11-13

arxiv.org/abs/0711.1900v1

Phys. Rev. Lett. 100, 056602(2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.100.056602

Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

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