Tunneling and Electric-Field Effects on Electron-Hole Localization in Artificial Molecules

Details Tunneling and Electric-Field Effects on Electron-Hole Localization in Artificial Molecules Tunneling and Electric-Field Effects on Electron-Hole Localization in Artificial Molecules

2003-02-04

arxiv.org/abs/cond-mat/0302081v2

Solid State Commun. 128, 147 (2003).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1016/S0038-1098(03)00661-6

We theoretically investigate the Stark shift of the exciton goundstate in two vertically coupled quantum dots as a function of the interdot distance. The coupling is shown to enhance the tuneability of the linear optical properties, including energy and oscillator strength, as well as the exciton polarizability. The coupling regime that maximizes these properties results from the detailed balance between the effects of the single-particle tunneling, of the electric field and of the carrier-carrier interaction. We discuss the relevance of these results to the possible implementation of quantum-information processing based on semiconductor quantum dots: in particular, we suggest the identification of the qubits with the exciton levels in coupled- rather than single-dots.

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