Charge Sensitivity of Superconducting Single-Electron Transistor

Details Charge Sensitivity of Superconducting Single-Electron Transistor Charge Sensitivity of Superconducting Single-Electron Transistor

1996-04-03

arxiv.org/abs/cond-mat/9604021v2

Appl. Phys. Lett. 69, 2593 (1996)

Physics

Condensed Matter

One reference added and minor difficulty with Postscript file fixed. 11 pages, RevTex, 3 figures (eps); Submitted to Appl. Phy

Scientific paper

10.1063/1.117710

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not smeared by the finite temperature. We discuss also the increase of the maximum operation temperature due to superconductivity and a new peak-like feature on the $I-V$ curve of $SISIS$ structures.

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