Spin relaxation of conduction electrons in (110)-grown quantum wells

Details Spin relaxation of conduction electrons in (110)-grown quantum wells Spin relaxation of conduction electrons in (110)-grown quantum wells

2009-07-31

arxiv.org/abs/0907.5556v2

Phys. Rev. B 80, 165317 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along the growth direction is characterized by two different lifetimes and leads to the appearance of an in-plane spin component. The magnitude and sign of the in-plane component are determined by the structure inversion asymmetry of the quantum well and can be tuned by the gate voltage. In an external magnetic field, the interplay of cyclotron motion of carriers and the Larmor precession of electron spin can result in a nonmonotonic dependence of the spin density on the magnetic field.

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