Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode

Details Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode

2002-06-24

arxiv.org/abs/cond-mat/0206436v1

Phy. Rev. B 66 (2002) 073307

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.66.073307

We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped region is shown to depend mainly on the difference between the electrode Fermi level and the band gap of carbon nanotubes. We quantitatively show how the gate/nanotube distance is important to get large on--off ratios. We explain the bend of the current versus gate voltage as the transition from a thermal--activation region to a tunneling region. A good agreement is obtained with experimental results for carbon nanotubes field--effect transistors.

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