Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition

Details Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition Response to Parallel Magnetic Field of a Dilute 2D Electron System across the Metal-Insulator Transition

1999-03-10

arxiv.org/abs/cond-mat/9903179v3

Phys. Rev. B 60, R5093 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

References added and updated. To be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.60.R5093

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems.

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