Donor states in modulation-doped Si/SiGe heterostructures

Details Donor states in modulation-doped Si/SiGe heterostructures Donor states in modulation-doped Si/SiGe heterostructures

2003-02-14

arxiv.org/abs/cond-mat/0302294v2

Physical Review B vol 68, 165338 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

17 pages, 10 figures

Scientific paper

10.1103/PhysRevB.68.165338

We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is non-variational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly non-isotropic due to the selection rules. The results obtained from calculations for Si/Si$_{1-x}$Ge$_x$ quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered.

Affiliated with

Also associated with

No associations

Rating

Donor states in modulation-doped Si/SiGe heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Donor states in modulation-doped Si/SiGe heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Donor states in modulation-doped Si/SiGe heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-267141