Third order susceptibility: general formalism for photoinduced current density in semiconductors

Details Third order susceptibility: general formalism for photoinduced current density in semiconductors Third order susceptibility: general formalism for photoinduced current density in semiconductors

2008-10-20

arxiv.org/abs/0810.3565v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

added subsection on diagram representation with one figure; added some references; small correction in the last part of the di

Scientific paper

This paper contains a detailed derivation of the photoinduced current density at third order in the coupling between a semiconductor and a multifrequency photon field, starting from its standard textbook expression as a third order time integral of a triple commutator. Due to a major intrinsic problem linked to this triple commutator, such a derivation has been made possible quite recently only, thanks to the tools developed in the composite-boson many-body theory we have just constructed. The photoinduced current density is shown to ultimately read in a compact form, in terms of the Pauli and Coulomb scatterings for exciton-exciton interactions introduced in this theory. Representation in Shiva diagrams is also given to better grasp the physics of the various contributions.

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