An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves

Details An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves

2003-11-04

arxiv.org/abs/cond-mat/0311060v1

Acta Phys. Pol. A 103 (6): 533-538 June 2003

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 4 figures

Scientific paper

We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating SAW beam, up to n = 20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the SAW frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be dI/I = +/- 25 ppm over 0.25 mV in gate voltage, which is better than previous results.

Affiliated with

Also associated with

No associations

Rating

An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-264476