Electronic and spin properties of hole point contacts

Details Electronic and spin properties of hole point contacts Electronic and spin properties of hole point contacts

2006-08-02

arxiv.org/abs/cond-mat/0608045v1

phys. stat. sol. (c) 3, 4354 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, LaTex Wiley-VCH style (class files included), accepted for publication in proceedings of PASPS-IV

Scientific paper

10.1002/pssc.200672801

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated quasi-onedimensional (quasi-1D) hole subband energies and anisotropic Lande g-factors. Confinement-induced band mixing results in the possibility to manipulate electronic and spin properties of quasi-1D hole states over a much wider range than is typically possible for confined conduction-band electrons. Our results are relevant for recent experiments where source-drain-bias spectroscopy was used to measure Zeeman splitting of holes in p-type quantum point contacts.

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