Tunnel magnetoresistance and interfacial electronic state

Details Tunnel magnetoresistance and interfacial electronic state Tunnel magnetoresistance and interfacial electronic state

2002-03-12

arxiv.org/abs/cond-mat/0203247v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, 2 column revtex4 format, ICMFS 2002 (Kyoto)

Scientific paper

10.1088/0022-3727/35/19/317

We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model and the linear response theory. It is indicated that the TMR ratio is strongly reduced depending on the position of the $d$-levels of impurities, based on reduction in the spin-dependent $s$-electron tunneling in the majority spin state. The results are compared with experimental results for Cr-dusted ferromagnetic tunnel junctions, and also with results for metallic multilayers for which similar reduction in giant magnetoresistance has been reported.

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