Dirac-Kronig-Penney model for strain-engineered graphene

Details Dirac-Kronig-Penney model for strain-engineered graphene Dirac-Kronig-Penney model for strain-engineered graphene

2010-06-18

arxiv.org/abs/1006.3748v2

Phys. Rev. B 82, 155417 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 8 figures

Scientific paper

10.1103/PhysRevB.82.155417

Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model, which describes the phase-coherent transport in clean monolayer samples with an one-dimensional modulation of the strain and the electrostatic potentials. We compare the exact results to a qualitative band-structure analysis. We find that periodic strains induce large pseudo-gaps and suppress charge transport in the direction of strain modulation. The strain-induced minima in the gate-voltage dependence of the conductivity characterize the quality of graphene superstructures. The effect is especially strong if the variation of inter-atomic distance exceeds the value a^2/l, where a is the lattice spacing of free graphene and l is the period of the superlattice. A similar effect induced by a periodic electrostatic potential is weakened due to Klein tunnelling.

Affiliated with

Also associated with

No associations

Rating

Dirac-Kronig-Penney model for strain-engineered graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dirac-Kronig-Penney model for strain-engineered graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dirac-Kronig-Penney model for strain-engineered graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-261162