Raman Response in Doped Antiferromagnets

Details Raman Response in Doped Antiferromagnets Raman Response in Doped Antiferromagnets

1996-01-29

arxiv.org/abs/cond-mat/9601136v2

Phys. Rev. B 53, 15095 (1996)

Physics

Condensed Matter

11 pages revtex, 3 postscript figures. Minor corrections and changes from previous version, to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.53.15095

The resonant part of the $B_{1g}$ electronic Raman scattering response is calculated within the $t-J$ model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime.

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