Electric field driven donor-based charge qubits in semiconductors

Details Electric field driven donor-based charge qubits in semiconductors Electric field driven donor-based charge qubits in semiconductors

2005-10-19

arxiv.org/abs/cond-mat/0510520v1

Pys. Rev. B 73, 045319 (2006)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.73.045319

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors.

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