Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

Details Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

2005-02-14

arxiv.org/abs/cond-mat/0502345v1

Phys. Rev. Lett. 95, 066601 (2005)

Physics

Condensed Matter

Other Condensed Matter

4 pages

Scientific paper

10.1103/PhysRevLett.95.066601

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

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