Simulation of quantum dead-layers in ferroelectric tunnel junctions

Details Simulation of quantum dead-layers in ferroelectric tunnel junctions Simulation of quantum dead-layers in ferroelectric tunnel junctions

2005-03-03

arxiv.org/abs/cond-mat/0503070v1

Europhys. Lett. 72, 282 (2005)

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1209/epl/i2005-10219-7

In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.

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