Optical conductivity of one-dimensional narrow-gap semiconductors

Details Optical conductivity of one-dimensional narrow-gap semiconductors Optical conductivity of one-dimensional narrow-gap semiconductors

2002-05-16

arxiv.org/abs/cond-mat/0205334v1

Int. Jour. Mod. Phys. B Vol. 16, 1499 (2002)

Physics

Condensed Matter

Strongly Correlated Electrons

RevTeX4 file, 6 pages, no figure

Scientific paper

10.1142/S0217979202010361

The optical conductivities of two one-dimensional narrow-gap semiconductors, anticrossing quantum Hall edge states and carbon nanotubes, are studied using bosonization method. A lowest order renormalization group analysis indicates that the bare band gap can be treated perturbatively at high frequency/temperature. At very low energy scale the optical conductivity is dominated by the excitonic contribution, while at temperature higher than a crossover temperature the excitonic features are eliminated by thermal fluctuations. In case of carbon nanotubes the crossover temperature scale is estimated to be 300 K.

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