Electron self-trapping in intermediate-valent SmB6

Details Electron self-trapping in intermediate-valent SmB6 Electron self-trapping in intermediate-valent SmB6

1999-11-17

arxiv.org/abs/cond-mat/9911266v1

Phys. Rev. B 61, 15714-15725 (2000)

Physics

Condensed Matter

Strongly Correlated Electrons

12 pages, 3 figures

Scientific paper

10.1103/PhysRevB.61.15714

SmB6 exhibits intermediate valence in the ground state and unusual behaviour at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf-hybridization or by hopping transport in an impurity band. At least three different energy scales determine three temperature regimes of electron transport in this system. We consider the ground state properties, the soft valence fluctuations and the spectrum of band carriers in n-doped SmB6. The behaviour of excess conduction electrons in the presence of soft valence fluctuations and the origin of the three energy scales in the spectrum of elementary excitations is discussed. The carriers which determine the low-temperature transport in this system are self-trapped electron-polaron complexes rather than simply electrons in an impurity band. The mechanism of electron trapping is the interaction with soft valence fluctuations.

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