Mean-field approach to ferromagnetism in (III,Mn)V diluted magnetic semiconductors at low carrier densities

Details Mean-field approach to ferromagnetism in (III,Mn)V diluted magnetic semiconductors at low carrier densities Mean-field approach to ferromagnetism in (III,Mn)V diluted magnetic semiconductors at low carrier densities

2001-11-03

arxiv.org/abs/cond-mat/0111045v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages + 16 figures

Scientific paper

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.

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