Electron dynamics in intentionally disordered semiconductor superlattices

Details Electron dynamics in intentionally disordered semiconductor superlattices Electron dynamics in intentionally disordered semiconductor superlattices

1996-10-09

arxiv.org/abs/cond-mat/9610078v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pagex, RevTex, 13 Postscript figures. Physical Review B (in press)

Scientific paper

10.1103/PhysRevB.54.14550

We study the dynamical behavior of disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Dom\'{\i}nguez-Adame {\em et al.} [Phys. Rev. B {\bf 51}, 14 ,359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controllingthe outp ut band using a dc electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work.

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