Tunneling in the Electron Box in the Nonperturbative Regime

Details Tunneling in the Electron Box in the Nonperturbative Regime Tunneling in the Electron Box in the Nonperturbative Regime

1994-07-23

arxiv.org/abs/cond-mat/9407096v1

Physics

Condensed Matter

18 pages in Revtex, TFP-P_0/9402

Scientific paper

10.1016/0921-4526(94)90089-2

We study charging effects and tunneling in the single electron box. Tunneling mixes different charge states and in the nonperturbative regime the charge in the island may be strongly screened. When charge states are nearly degenerate the screening of the charge is strong even in the weak tunneling regime. Virtual tunneling processes reduce both the level splitting and the tunneling strength. The charge on the island and the decay rates are calculated. In the strong tunneling regime also nondegenerate states are affected by tunneling. Strong-coupling scaling renormalizes the effective capacitance, a result which we confirm by Monte Carlo simulations. The tunneling strength scales to smaller values into the regime where the weak-coupling scaling applies. We propose a two stage scaling procedure providing the unified picture for the problem. The scaling analysis is also extended to superconducting tunnel junctions with finite subgap conductance. (9 figures upon request)

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