Spin excitations of the correlated semiconductor FeSi probed by THz radiation

Details Spin excitations of the correlated semiconductor FeSi probed by THz radiation Spin excitations of the correlated semiconductor FeSi probed by THz radiation

2011-06-03

arxiv.org/abs/1106.0651v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 4 figures

Scientific paper

By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.

Affiliated with

Also associated with

No associations

Rating

Spin excitations of the correlated semiconductor FeSi probed by THz radiation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin excitations of the correlated semiconductor FeSi probed by THz radiation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin excitations of the correlated semiconductor FeSi probed by THz radiation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-223950