Strain effects on the thermal properties of ultra-scaled Si nanowires

Details Strain effects on the thermal properties of ultra-scaled Si nanowires Strain effects on the thermal properties of ultra-scaled Si nanowires

2011-06-03

arxiv.org/abs/1106.0550v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 Figures, 8 Pages, submitted to APL

Scientific paper

The impact of uniaxial and hydrostatic stress on the ballistic thermal conductance ($\kappa_{l}$) and the specific heat ($C_{v}$) of [100] and [110] Si nanowires are explored using a Modified Valence Force Field phonon model. An anisotropic behavior of $\kappa_{l}$ and isotropic nature of $C_{v}$ under strain are predicted for the two wire orientations. Compressive (tensile) strain decreases (increases) $C_{v}$. The $C_{v}$ trend with strain is controlled by the high energy phonon sub-bands. Dominant contribution of the low/mid (low/high) energy bands in [100] ([110]) wire and their variation under strain governs the behavior of $\kappa_{l}$.

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