Fabrication and properties of gallium metallic photonic crystals

Details Fabrication and properties of gallium metallic photonic crystals Fabrication and properties of gallium metallic photonic crystals

2002-08-20

arxiv.org/abs/cond-mat/0208392v1

Physics

Condensed Matter

Materials Science

7 pages, 4 figures, reported at ETOPIM 6 Conference, Snowbird, Utah, July 2002

Scientific paper

10.1016/S0921-4526(03)00479-4

Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtained show that Ga-opal crystals are metallic network with slightly smaller temperature coefficient of resistivity than that for bulk gallium. Optical reflectivity of bulk gallium, plain opal and several Ga-opal crystals were measured at photon energies from 0.3 to 6 eV. A pronounced photonic stop band in the visible spectral range was found in both the plain and Ga infiltrated opals. The reflectivity spectra also show increase in reflectivity below 0.6 eV; which we interpret as a significantly lower effective plasma frequency of the metallic mesh in the infiltrated opal compare to the plasma frequency in the pure metal.

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