Memory Effects In Nonequilibrium Quantum Impurity Models

Details Memory Effects In Nonequilibrium Quantum Impurity Models Memory Effects In Nonequilibrium Quantum Impurity Models

2011-05-26

arxiv.org/abs/1105.5348v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

Memory effects play a key role in the dynamics of strongly correlated systems driven out of equilibrium. In the present study, we explore the nature of memory in the nonequilibrium Anderson impurity model. The Nakajima--Zwanzig--Mori formalism is used to derive an exact generalized quantum master equation for the reduced density matrix of the interacting quantum dot, which includes a non-Markovian memory kernel. A real-time path integral formulation is developed, in which all diagrams are stochastically sampled in order to numerically evaluate the memory kernel. We explore the effects of temperature down to the Kondo regime, as well as the role of source--drain bias voltage and band width on the memory. Typically, the memory decays on timescales significantly shorter than the dynamics of the reduced density matrix itself, yet under certain conditions it develops a smaller long tail. In addition we address the conditions required for the existence, uniqueness and stability of a steady-state.

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